![Figure 4 from Charge trapping related channel modulation instability in P-GaN gate HEMTs | Semantic Scholar Figure 4 from Charge trapping related channel modulation instability in P-GaN gate HEMTs | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/41af9159b3b4a1659186c7d571d5ffc36cdabc05/3-Figure4-1.png)
Figure 4 from Charge trapping related channel modulation instability in P-GaN gate HEMTs | Semantic Scholar
![Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD | SpringerLink Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2F1556-276X-7-141/MediaObjects/11671_2011_Article_680_Fig4_HTML.jpg)
Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD | SpringerLink
![Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications - ScienceDirect Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S2468217917300060-gr2.jpg)
Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications - ScienceDirect
![Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor | Scientific Reports Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fs41598-021-86575-7/MediaObjects/41598_2021_86575_Fig6_HTML.png)
Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor | Scientific Reports
![Figure 2 from On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices | Semantic Scholar Figure 2 from On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/33fa2193ccdef62cc70b3b0473af53a154005514/2-Figure2-1.png)
Figure 2 from On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices | Semantic Scholar
An AlGaN/GaN High Electron Mobility Transistor With a Built-In Light Emitter Using Radiative Recombination of Two-Dimensional El
![High Electron Mobility Transistors (HEMTs) – Millimeter-Wave Electronics Laboratory (MWE) | ETH Zurich High Electron Mobility Transistors (HEMTs) – Millimeter-Wave Electronics Laboratory (MWE) | ETH Zurich](https://mwe.ee.ethz.ch/research/HEMT/_jcr_content/par/fullwidthimage/image.imageformat.930.236322556.jpg)